2N3287 thru 2N3290 (SILICON)
CASE 20
(TO·72)
NPN silicon annular transistors for high-gain, lownoise amplifier, oscillator, mixer and frequency multiplier applications.
MAXIMUM RATINGS
Rating
Collector - Base
Voltage Collector - Emitter
Voltage Collector - Emitter
Voltage Emitter - Base
Voltage Collector Current
Symbol
VCB VCES VCEO VEB
IC
2N3287 2N3288
40 40 20 3.
0 50
2N3289 2N3290
30 30 15 3.
0 50
Unit
Volts Volts Volts Volts rnA
Power Dissipation at 25°C Case Above 25°C derate 1.
71 mW/oC
Power Dissipation at 25° C ambo Above 25°C derate 1.
14 mW;oC
PD PD
300 300 mW 200 200 mW
Junction Temperature Storage Temperature Range
TJ , Tstg
+200
+200
°C
-65 to +200 -65 to +200 °C
...