isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation
Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEX
Collector-Emitter
Voltage
700
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
3.
5
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ
Operating Temperature Range
-65~+150 ℃
Tstg
Storage Junction Temperature Range -65~+200 ℃
THERMAL CHARACTERISTI...