www.
DataSheet.
co.
kr
2N4003K
N-Channel Enhancement Mode Power
MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
*
* Low Gate
Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design.
* Low Gate Charge for Fast Switching.
* ESD Protected Gate.
* Minimum Breakdown
Voltage Rating of 30V.
Features:
* Gate Pretection Diode
SOURCE 2
DRAIN CURRENT 0.
5 AMPERES DRAIN SOUCE
VOLTAGE 30
VOLTAGE
3 1 2
Application:
* Level Shifters * Level Switches * Low Side Load Switches * Portable Applications
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current 1 ,Steady State
Unless Otherwise Specified) Symbol
V DS VG S
Value
30 ±20 0.
5 0.
37 0.
69 0.
56 0.
40 0.
83 1...