| Part Number | 2N4393 |
| Manufacturer | Vishay |
| Title | N-Channel JFETs |
| Description | The 2N/PN/SST4391 series features many of the superior characteristics of JFETs which make it a good choice for demanding analog switching applica... |
| Features |
D Low On-Resistance: 439130 W D Fast Switching—tON: 4 ns D High Off-Isolation: ID(off) with Low
Leakage
D Low Capacitance: 3.5 pF D Low Insertion Loss
BENEFITS
D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good Frequency Response, Low ... |
| File Size | 60.01KB |
| Datasheet |
|
2N4393 : .
2N4393 : InterFET Product Folder Technical Support Order Now 2N4391-2-3 2N4391, 2N4392, 2N4393 N-Channel JFET Features • InterFET N0132S Geometry • Low Noise: 1.2 nV/√Hz Typical • Fast Switching • Low Cutoff Voltage: 2N4393 3.0V • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Low On Resistance Analog Switches • Choppers • Commutators Description The -40V InterFET 2N4391, 2N4392 and 2N4393 are targeted for switch, chopper and commutator designs. Gate leakages are typically less than 50pA at room temperatures. The 2N4393 has a cutoff voltage of less than 3.0V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applicati.
2N4393 : SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393 • High Speed Switching. • Low On Resistance. • Designed For High Reliability and Space Applications. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS Drain – Source Voltage 40V VGS Gate – Source Voltage -40V VGD Gate – Drain Voltage -40V IG Gate Current 50mA PD Total Power Dissipation at TA = 25°C 300mW Derate Above 25°C 2mW/°C TJ Junction Temperature Range -55 to +175°C Tstg Storage Temperature Range -65 to +200°C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)GSS VGS(off) IDSS(1) IGSS Gate – Source Breakdown Voltage Gate – Source Cut-off Voltage Saturati.
2N4393 : N-Channel JFET Switch CORPORATION 2N4391 – 2N4393 / PN4391 – PN4393 / SST4391 – SST4393 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +200oC Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300oC TO-18 TO-92 SOT-23 Power Dissipation 1.8W 360mW 350mW Derate above 25oC 10mW/ oC 3.3mW/ oC 2.8mW/ oC Plastic Storage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +15.
2N4393 : 2N4391 2N4392 2N4393 SILICON N-CHANNEL JFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4391 series types are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Gate Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VGD VGS IG PD TJ, Tstg 40 40 50 1.8 -65 to +175 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N4391 2N4392 SYMBOL TEST CONDITIONS MIN MAX MIN MAX IGSS VGS=20V - 0.1 - 0.1 IGSS VGS=20V, TA=125°C - 0.2 - 0.2 IDSS VDS=20V 50 150 25 75 ID(OFF) .