2N5070 (SILICON)
The RF Line
NPN SILICON RF POWER TRANSISTORS
.
.
.
designed primarily for applications.
s.
high-power linear amplifier from 2.
0 to 75 MHz.
• Optimized for Operation from a 28-Volt Supply • Power Out@ 28 Vdc, 30 MHz - 25 W (PEP) • Intermodulation Distortion at 25 W (PEP)
IMD = 30 dB (Max)
• Isothermal-Resistor Design Results in Rugged Device
25 W (PEP) - 30 MHz
RF POWER TRANSISTOR NPN SILICON
'MAXIMUM RATINGS Rating
Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current Continuous
Peak Base Current - Continuous Total Device Dissipation@Tc - 25°C
Derate above 2SoC Operating and Storage Junction
Temperature Range
·'ndicates JEDEC Registered Data...