isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-emitter sustaining
voltage VCEO(SUS)= 90V(Min) ·High saturation
voltage ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high-current, high-speed switching
circuits such as:low-distortion power
amplifiers,oscillators, switching regulators, series regulators, converters, and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
100
V
VCEO(SUS) Collector-Emitter
Voltage
50
V
VCER(SUS) Collector-Emitter
Voltage RBE= 50Ω
75
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-C...