2N5223 (SILICON)
NPN SILICON AMPLIFIER TRANSISTOR
· .
.
designed for low-level.
small-signal.
general-purpose amplifier applications.
• High Current-Gain-Bandwidth Product fT = 150 MHz (Min) @ IC = 10 mAdc-
• Collector-Emitter Saturation
VoltageVCE(sat) = 0.
7 Vdc (Max) @ IC = 10 mAdc
• Collector-Base CapacitanceCcb= 4.
0 pF (Max)@ VCB = 10 Vdc
NPN SILICON AMPLIFIER TRANSISTOR
"MAXIMUM RATINGS Rating
Collector-Emitter
Voltage Collector-Ba.
.
Voltage
Emitter-Base
Voltage
Collector Current - Continuous Total Power Dissipation @ T A "" 25°C
Derate above 2SOC Total Power Dissipation @ TC = 25°C
Darato above 2sOC Operating Bnd Storage Junction
Temperature Range
Symbol VCEO VCB VEB
IC
Po
Po
TJ.
Tst...