2N5415S
HIGH-
VOLTAGE AMPLIFIER
DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO I CM Pt o t T st g, T j October 1988 Parameter Collector-base
Voltage (I E = 0) Collector-emitter
Voltage (I B = 0) Emitter-base
Voltage (I C = 0) Collector Peak Current Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C Storage and Junction Temperature Value – 200 – 200 –4 –1 1 10 – 55 to 200 Unit V V V A W W °C 1/4
2N5415S
THERMAL DATA
R t h j- cas e R t h j-amb Thermal Resistance Junction-case Therm...