MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET VHF/UHF
Amplifiers
N–Channel — Depletion
3 GATE
1 DRAIN
2N5484 2N5486
2 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate
Voltage
Reverse Gate – Source
Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TC = 25°C Derate above 25°C
VDG VGSR
ID IG(f) PD
25 25 30 10 350 2.
8
Operating and Storage Junction Temperature Range
TJ, Tstg
– 65 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Gate – Source Breakdown
Voltage (IG = –1.
0 µAdc, VDS = 0)
Gate Reverse Current (VGS = –20 Vdc, VDS = 0) (VGS = –20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff
Voltage (VDS = ...