matched dual n-channel JFETs designed for • • •
• Differential
Amplifiers • High Input
Impedance
Amplifiers
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-to-Gate
Voltage .
.
.
.
±80V
Gate-Drain or Gate-Source
Voltage -40 V Gate Current .
.
10 mA
Device Dissipation (Each Side), T A =25°C (Derate 3 mWrC) .
.
.
.
367mW
Total Device Dissipation, T A =25°C
(Derate 4 mWrC) .
.
.
.
500mW
Storage Temperature Range .
.
.
.
•.
.
.
.
-65 to +200°C
H
Siliconix
Performance Curves NT See Section 4
BENEFITS
• Matching Characteristics Specified
• High Input Impedance
IG = 1 pA Max (2N5906-9)
TO·78 See Section 6
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