matched dual
-- •n-channel JFETs
designed for • • •
0-
1ft
Wideband Differential
Z
Amplifiers
~
ABSOLUTE MAXIMUM RATINGS (25°C)
Gate·to·Gate
Voltage .
.
.
.
±80V
Gate·Drain or Gate·Source
Voltage •.
.
.
-25 V Gate Current .
50 rnA Device Dissipation (Each Side), (Derate 3 mW;oC) .
.
367mW Total Device Dissipation,(Derate 4 mW;oC) .
.
500mW
Storage Temperature Range .
.
.
•.
.
.
•.
-65 to +2000 c
Lead Temperature (1/16" from case for 10 seconds) 3000 C
H
Siliconix
Performance Curves NZf.
.
D See Section 4
BENEFITS
• High Gain through 100 MHz
gfs 5000 ~mho
• Matching Characteristics Specified
TO·78 See SectIon 6
...