DatasheetsPDF.com

2N6051

Part Number 2N6051
Manufacturer Microsemi Corporation
Description PNP DARLINGTON POWER SILICON TRANSISTOR
Published Jun 4, 2007
Detailed Description TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified L...
Datasheet 2N6051




Overview
TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices 2N6051 2N6052 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation(1) Symbol VCEO VCBO VEBO IB IC PT Top, Tstg Symbol RθJC 2N6051 80 80 2N6052 100 100 Unit Vdc Vdc Vdc Adc Adc W W 0 com @ TC = +250C @ TC = +1000C Operating & Storage Junction Temperature Range 5.
0 0.
2 12 150 75 -55 to +175 Max.
1.
0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Unit 0 C/W TO-3* (TO-204AA) *See appendix A for package outline 1) Der...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)