KIA
SEMICONDUCTORS
2.
0A, 600V N-CHANNEL
MOSFET
2N60H
1.
Description
The KIA2N60H N-Channel enhancement mode silicon gate power
MOSFET is designed for high
voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
2.
Features
RDS(ON)=4.
1Ω@VGS=10V.
Low gate charge (typical 9nC) High ruggedness Fast switching capability Avalanche energy specified Improved dv/dt capability
3.
Pin configuration
Pin 1 2 3 4
1 of 6
Function Gate Drain
Source Drain
Rev 1.
1 JAN 2014
KIA
SEMICONDUCTORS
2.
0A, 600V N-CHANNEL
MOSFET
2N60H
4.
Absolute maximum ratings
Parameter
Symbol
Drain-source
voltage
Gate-sourc...