isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6132
DESCRIPTION ·DC Current Gain-
: hFE = 20-100@ IC= -2.
5A ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= -40V(Min) ·Complement to Type 2N6129 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-40
V
VCEO
Collector-Emitter
Voltage
-40
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-2
A
50
W
...