isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: VCEO=-100V(Min) ·Minimum Lot-to-Lot variations for robust device
Performance and reliable operation
APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VCBO
Collector-Base
Voltage
-120
V
VCEO
Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
PD
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-50
A
250
W
-65~200 ℃
Tstg
Storage Temperature Range
-65~200 ℃
2N6378
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isc Silicon PNP Power...