www.
DataSheet4U.
com
2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium−Power Silicon Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Features http://onsemi.
com
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.
0 Adc • Collector−Emitter Sustaining
Voltage − @ 100 mAdc • • • •
VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 Low Collector−Emitter Saturation
Voltage − VCE(sat) = 2.
0 Vdc (Max) @ IC = 5.
0 Adc − 2N6387, 2N6388 Monolithic Construction with Built−In Base−Emitter Shunt Resistors TO−220AB Compact Package Pb−Free Packages are Available*
DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60...