MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6497/D
High
Voltage NPN Silicon Power Transistors
.
.
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designed for high
voltage inverters, switching regulators and line–operated amplifier applications.
Especially well suited for switching power supply applications.
• High Collector–Emitter Sustaining
Voltage — VCEO(sus) = 250 Vdc (Min) — 2N6497 VCEO(sus) = 300 Vdc (Min) — 2N6498 • Excellent DC Current Gain hFE = 10 – 75 @ IC = 2.
5 Adc • Low Collector–Emitter Saturation
Voltage @ IC = 2.
5 Adc — VCE(sat) = 1.
0 Vdc (Max) — 2N6497 VCE(sat) = 1.
25 Vdc (Max) — 2N6498
2N6497 2N6498*
*Motorola Preferred Device
5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS
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