isc Silicon NPN Power Transistor
DESCRIPTION ·High
Voltage Capability ·High Current Current Capability ·Low Collector Saturation
Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Desinged for use in switching and linear applications in
military and power conversion.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
400
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