Silicon PNP Power Transistor
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification 2N6668 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A ·Complement to Type 2N6388 APPLICATIONS ·Designed for ge...
Inchange Semiconductor