Isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
2N7000
·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·Load switch ·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
60
VGSS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
200
IDM
Drain Current-Single Pulsed
1.
3
PD
Total Dissipation @TC=25℃
350
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V mA A
mW ℃ ℃
·THERMAL CHARACTERISTIC...