SEMICONDUCTOR
TECHNICAL DATA
INTERFACE AND SWITCHING APPLICATION.
FEATURES ESD Protected 2000V.
High density cell design for low RDS(ON).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
SYMBOL RATING
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current
Continuous Pulsed (Note 1)
Drain Power Dissipation (Note 2)
Junction Temperature
Storage Temperature Range Thermal Characteristics
Thermal Resistance, Junction-toAmbient (Note 2)
VDSS VGSS
ID IDP PD Tj Tstg
60 20 300 1200 350 150 -55 150
Rth(j-a)
357
Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on 99% Alumina 10 8 0.
6mm
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