2N7002KW — N-Channel Enhancement Mode Field Effect Transistor
May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance • Low Gate Threshold
Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Pb Free/RoHS Compliant • ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
S G SOT-323
Marking : 7KW
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDSS VGSS
ID
Drain-Source
Voltage Gate-Source
Voltage Maximum Drain Current
- Continuous
TJ = 100°C - Pulsed
60
±20
310 195 1.
2
V
V
mA mA A
TJ TSTG
Operating Junction Tempe...