TEMIC
Siliconix
N-Channel Enhancement-Mode Transistor
Product Summary
V(BR)nSS (V) 200
rnS(on) (Q) 0.
16
TO-257AB Hermetic Package
o
In (A)
14
D
2N7086
Case Isolated
GD S TopV,ew
S N-Channel
MOSFET
Absolute Maximum Ratings (Tc = 25°C Unless Othernise Noted)
Drain-Source
Voltage Gate-Source
Voltage
Parameter
Continuous Drain Current (TJ = IS0"C)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Lead Thmperature (1116" from case for 10 sec.
)
ITc=2S"C ITc = loo"C
ITc=25"C ITc= 100"C
Symbol
VDS VGS
ID
IDM
Po
TJ.
Tstg TL
Limit
200 ±20 14 8.
5 56 60 23 -55 to 150 300
Unit
V
A
W "C
Thermal Resistance Ratings
Parameter
Maximum Junction...