2N840 (SILICON) 2N841
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO·18) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter
Voltage
Collector-Emitter
Voltage
Collector-Base
Voltage
Emitter-Base
Voltage
Collector Current
Total Device Dissipation @ TA =25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
VCEO VCES VCB VEB
IC
PD
TJ , Tstg
Value
45 45 45 2.
0
1.
0
500 2.
86 -65 to +200
Unit
Vdc Vdc Vdc Vdc Adc mW mW;oC °c
2-109
2N840, 2N841 (Continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakd...