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2PD601AW

Part Number 2PD601AW
Manufacturer GME
Description NPN Transistor
Published Apr 20, 2018
Detailed Description NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.(IC= 100mA)  Excellent HFE Linearity.  Power dis...
Datasheet 2PD601AW





Overview
NPN Silicon Epitaxial Planar Transistor FEATURES  Collector Current.
(IC= 100mA)  Excellent HFE Linearity.
 Power dissipation.
(PC=200mW) Pb Lead-free APPLICATIONS  General purpose application.
Production specification 2PD601AW ORDERING INFORMATION Type No.
Marking 2PD601AW 6D/6E/6F SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 50 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ F028 Rev.
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