INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1006B
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown
Voltage-
V(BR)CEO= -250Vdc (Min) ·Wide Area of Safe Operation ·Complement to Type 2SC2336B ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-250
V
VCEO Collector-Emitter
Voltage
-250
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-1.
5
A
ICM
Collector Current-Peak
-3.
0
A
Collector Power Dissipation@ Ta=25℃ 1.
5
PC
W...