isc Silicon PNP Power Transistor
2SA1064
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -150V(Min.
) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2488 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-8
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-12
A
100
W
150
℃
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