isc Silicon PNP Power Transistor
2SA1077
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -120V(Min.
) ·Fast Switching Speed ·Wide Area of Safe Operation ·Complement to Type 2SC2527 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power
amplifiers ·Audio power
amplifiers ·Switching regulators ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-120
V
VCEO Collector-Emitter
Voltage
-120
V
VEBO
Emitter-Base
Voltage
-7.
0
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-10
A
60
W
150
℃
Ts...