isc Silicon PNP Power Transistor
2SA1080
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -40V(Min.
) ·Good Linearity of hFE ·Complement to Type 2SC2530 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-40
V
VCEO Collector-Emitter
Voltage
-40
V
VEBO
Emitter-Base
Voltage
-7
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-0.
5
A
20
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
isc website:www.
iscsemi.
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