isc Silicon PNP Transistor
DESCRIPTION ·High
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Design For Amplifier and general purpose applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
-120
V
VCEO Collector-Emitter
Voltage
-120
V
VEBO Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-100 mA
PD
Collector Power Dissipation@TA=25℃ 400 mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1082
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isc Silicon PNP Transistor
2SA1082
ELECTRICAL CHARACTERISTICS
T...