isc Silicon PNP Power Transistor
2SA1187
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2838 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO
Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
120
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃...