TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1200
2SA1200
High
Voltage Switching Applications
· High
voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.
) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Complementary to 2SC2880
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC (Note 1)
−150 −150
−5 −50 −10 500
800
V V V mA mA
mW
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
Note 1: 2SA1200 mounted on ceramic substr...