isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage
: V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
-150
V
VCEO Collector-Emitter
Voltage
-150
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1.
5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1280
isc website：www.
iscsemi.
com
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