isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation
Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-160
V
VCEO
Collector-Emitter
Voltage
-160
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-1.
5
A
IB
Base Current-Continuous
Collector Power Dissipation @Ta=25℃
PC Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature
-0.
15
A
2 W
20
150
℃
-55~150 ℃
2SA1332
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