isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-200
V
VCEO
Collector-Emitter
Voltage
-200
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-5
A
150
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SA1333
isc website：www.
iscsemi.
com
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