DATA SHEET
SILICON TRANSISTORS
2SA1376, 1376A
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH
VOLTAGE AMPLIFIERS
FEATURES • High
voltage
VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension: PT: 0.
75 W • Complementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
2SA1376/2SA1376A
Parameter
Symbol
Ratings
Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)* PT
Tj Tstg
−200 −180/−200
−5 −100 −200 0.
75 150 −55 to +150
* PW ≤ 10 ms...