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2SA1507

Part Number 2SA1507
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Jun 22, 2016
Detailed Description isc Silicon PNP Power Transistor 2SA1507 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ...
Datasheet 2SA1507




Overview
isc Silicon PNP Power Transistor 2SA1507 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3902 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV audio output, converters and inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.
0 V IC Collector Current-Continuous -1.
5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.
5 ...






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