isc Silicon PNP Power Transistor
2SA1606
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC4159 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-
voltage switching, AF power amplifier,
100W output predrivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-180
V
VCEO Collector-Emitter
Voltage
-160
V
VEBO
Emitter-Base
Voltage
-6.
0
V
IC
Collector Current-Continuous
-1.
5
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3
A
15
W
150
℃
Tstg
S...