isc Silicon PNP Power Transistor
2SA1615-Z
DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation
voltage:
hFE= 200min (VCE=-2V,IC=-0.
5A) VCE(sat)≤-0.
25V (IC=-4A,IB=-0.
05A) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·The 2SA1615 is available for the large current control
in small dimension due to the low saturation and is ideal for high efficiency DC/AC converters due to the fast switching speed
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-30
V
VCEO
Collector-Emitter
Voltage
-20
V
VEBO
Emitter-Base
Voltage
-10
V
I...