isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= -100V(Min) ·Fast Switching Speed ·Low Saturation
Voltage-
: VCE(sat)= -0.
3V(Max)@IC= -6A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·This type of power transistor is developed for high-speed
switching and features a very low VCE(sat), is ideal for use in switching power supplies,DC/DC converters,motor drivers, solenoid drivers, and other low-
voltage power supply devices, as well as for high current switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO
Collector-Emitter Volt...