Ordering number:ENN2972
PNP Epitaxial Planar Silicon Transistors
2SA1669
High-Frequency Amplifier Applications
Features
· High cutoff frequnecy : fT=3.
0GHz typ.
· High power gain : MAG=11dB typ (f=0.
9GHz) · Small noise figure : NF=2.
0dB typ (f=0.
9GHz)
Package Dimensions
unit:mm 2018B
[2SA1669]
0.
4 3
0.
16 0 to 0.
1
1.
5 0.
5 2.
5
0.
5
1 0.
95 0.
95 2 1.
9 2.
9
0.
8 1.
1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Col...