Ordering number:EN3520
Features
· Adoption of MBIT process.
· High breakdown
voltage (VCEO≥400V).
· Excellent linearity of hFE.
PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor
2SA1784/2SC4644
High
Voltage Driver Applications
Package Dimensions
unit:mm 2064
[2SA17814/2SC4644]
( ) : 2SA1784
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cuto...