isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA1837
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Driver stage amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-230
V
VCEO
Collector-Emitter
Voltage
-230
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
T...