2SA1955FV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955FV
General Purpose Amplifier Applications Switching and Muting Switch Application
• Low saturation
voltage: VCE (sat) (1) = −15 mV (typ.
) @IC = −10 mA/IB = −0.
5 mA
• Large collector current: IC = −400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
1.
2±0.
05 0.
8±0.
05 0.
4 0.
4
0.
22±0.
05
Unit: mm
1.
2±0.
05 0.
8±0.
05
1 23
0.
32±0.
05
Characteristics
Symbol
Rating
Unit
0.
13±0.
05
0.
5±0.
05
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC IB PC Tj Tstg
−15 −12 −5 −400 −50 15...