Ordering number:5182
NPN Triple Diffused Planar Silicon Transistor
2SA1967
High-
Voltage Amplifier, High-
Voltage Switching Applications
Features
· High breakdown
voltage (VCEO min=–900V).
· Small Cob (Cob typ=2.
2pF).
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm 2010C
[2SA1967]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cu...