isc Silicon PNP Power Transistor
2SA614
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -55V (Min.
) ·Collector-Emitter Saturation
Voltage-
: VCE(sat)= -0.
5V (Max.
)@ IC= -1A ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-80
V
VCEO Collector-Emitter
Voltage
-55
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Tempe...