isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -100V(Min.
) ·Contunuous Collector Current IC= -1A ·Power DissipationPC= 15W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency power amplifier color TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
-150
V
VCEO
Collector-Emitter
Voltage
-100
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-1.
0
A
PC
Collector Power Dissipation@TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Tempera...