isc Silicon PNP Power Transistor
2SA746
DESCRIPTION ·High Power Dissipation-
: PC= 100W(Max.
)@TC=25℃ ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= -80V(Min.
) ·Complement to Type 2SC1115 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
-80
V
VCEO Collector-Emitter
Voltage
-80
V
VEBO
Emitter-Base
Voltage
-6
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-4
A
100
W
150
℃
Tstg
Storage Temperature...