isc Silicon PNP Power Transistor
2SA814
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
:V(BR)CEO= -120(V)(Min.
) ·Complement to Type 2SC1624 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Medium power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
-120
V
VCEO Collector-Emitter
Voltage
-120
V
VEBO
Emitter-Base
Voltage
-5
V
IC
Collector Current-Continuous
-1
A
IE
Emitter Current-Continuous
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
15
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
...