:
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS
FEATURES • High Breakdown
Voltage : .
Complementary to 2SC1626,
V CEO =-80V
10.
3 MAX.
Unit in mm
03.
6 ±0.
2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base
Voltage
V CBO
Collector-Emitter
Voltage 'CEO
Emitter-Base
Voltage
EBO
Collector Current
Emitter Current
Collector Power Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature Range T stg
RATING -80 -80 -5
-750 750
1.
5
150
-55^ 150
UNIT V
mA mA
°C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
i.
BASE 2.
COLLECTOR (HEAT SINK; 3.
EMITTER
TO-220AB
TOSHIBA
2— IOAIA
Mounting Kit No.
AC75 We...